Wire bonding is a commonly used process to create low-cost and reliable electrical interconnects between semiconductor components and mechanical assemblies. Wire bonding is generally considered the most cost-effective and flexible interconnect technology for microelectronic assembly. It is used to manufacture the vast majority of fully packaged semiconductor products.

HESSE BONDJET BJ939 HEAVY GAUGE WIRE / RIBBON BONDING
SPECIFICATIONS
• Wire diameters:
100µm to 500µm (4 to 20 mil)
• Ribbon:
0.075mm x 0.75mm to 0.3mm x 2mm
• Wire and ribbon material: aluminum
• Working area:
X: 350 mm; Y: 560 mm; Z: 70 mm 
(13.8” x 20.0” x 2.76”)
• Accuracy:
2µm at 3 sigma
• Speed:
Up to 3 wires/sec

 
 

FIXTURING - A custom fixture must be designed to securely hold the parts before wire bonding can begin. 

PROCESS TOOLING - The assembly must be designed to accommodate the wire bond process tooling. 

PAD SIZE - The wire bond interconnect pads must be properly sized to accommodate the wire bonds. 

METALLIZATION - The metallization of the wire bond pad needs to be designed to be compatible with the chosen interconnect bond wire that can withstand the environmental and mechanical conditions of the end application. 

STRUCTURAL SUPPORT - The assembly must be designed to fully support the structure beneath the wire bonds.


Technical Resources 
•  Product Design for Wire-Bondability.pdf
•  Developing Robust Interconnects for Microelectronic Assemblies.pdf
•  Lessons Learned for Wire Bond Interconnect Process Success.pdf
•  Destructive Wire Bond Testing for Development and Production.pdf
•  Destructive Wire Bond Shear Testing and Its Purpose.pdf
•  Destructive Wire Bond Pull Testing and Its Purpose.pdf
• Wire Bonding Services Data Sheet.pdf